A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time-Reference-Cited by-同舟云学术

A short circuit protection circuit for SiC MOSFET with self-adjustive blanking time

Published:2021-11-10 Issue:21 Volume:18 Page:20210345-20210345
ISSN:1349-2543
Container-title:IEICE Electronics Express
language:en
Short-container-title:IEICE Electron. Express

Author:

Liu Tiantian¹,Quan Yuhua²,Zhou Xuetong²,Tian Yufei²,Cheng Xinhong¹,Huang Xiaoyi¹

Affiliation:

1. The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences

2. The Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/elex/18/21/18_18.20210345/_pdf

Reference32 articles.

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2. [2] J. Biela, et al.: “SiC versus Si--evaluation of potentials for performance improvement of inverter and DC-DC converter systems by SiC power semiconductors,” IEEE Trans. Ind. Electron. 58 (2011) 2872 (DOI: 10.1109/tie.2010.2072896).

3. [3] A.K. Morya, et al.: “Wide bandgap devices in AC electric drives: opportunities and challenges,” IEEE Trans. Transport. Electrific. 5 (2019) 3 (DOI: 10.1109/tte.2019.2892807).

4. [4] K. Shenai: “High-density power conversion and wide-bandgap semiconductor power electronics switching devices,” Proc. IEEE, 107 (2019) 2308 (DOI: 10.1109/jproc.2019.2948554).

5. [5] S. Fukunaga and T. Funaki: “An experimental study on estimating dynamic junction temperature of SiC MOSFET,” IEICE Electron. Express 15 (2018) 20180251 (DOI: 10.1587/elex.15.20180251).

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