Affiliation:
1. Department of Electrical and Electronics Engineering, Graduate School of Engineering, University of Fukui
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference7 articles.
1. Application of GaN-based heterojunction FETs for advanced wireless communication
2. [2] M. Higashiwaki, T. Mimura, and T. Matsui, “AlGaN/GaN Heterostructure Field-Effedt Transistors on 4H-SiC Substrates with Current-Gain Cutoff Frequency of 190GHz, ”Appl. Phys. Express, vol. 1, p. 021103, 2008.
3. Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review
4. Ensemble Monte Carlo simulation of sub-0.1μm gate length GaAs MESFETs
5. Transient electron transport in wurtzite GaN, InN, and AlN
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