Effects of interlayer growth condition on the transport properties of heterostructures with InGaN channel grown on sapphire by metal organic chemical vapor deposition
Author:
Affiliation:
1. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, No.2 South TaiBai Road, Xi'an 710071, China
Funder
National Natural Science Funds for Distinguished Yonung Scholar
National Science and Technology Major Project of Ministry of Science and Technology of China
National Sciences Foundation of China
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4917559
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5. Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
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