Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator
Author:
Affiliation:
1. Department of Electronics and Applied Physics, Tokyo Institute of Technology
2. Department of Physics, Division of Quantum Phases and Devices, Konkuk University
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://www.jstage.jst.go.jp/article/elex/8/18/8_18_1461/_pdf
Reference15 articles.
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4. [4] S. Tatemichi, M. Ichikawa, S. Kato, T. Koyama, and Y. Taniguchi, “Low-voltage, high-gain, and high-mobility organic complementary inverters based on N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide and pentacene,” Phys. Stat. Sol. (RRL), vol. 2, no. 2, pp. 47-49, March 2008.
5. [5] J. M. Choi, D. K. Hwang, S. H. Jeong, J. H. Park, E. Kim, J. H. Kim, and S. Im, “Polymer/AlOx bilayer dielectrics for low-voltage organic thin-film transistors,” J. Electrochemical Society, vol. 154, no. 5, pp. H331-H335, May 2007.
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1. AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs;IEICE Transactions on Electronics;2019-02-01
2. Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO2Gate Insulator;Japanese Journal of Applied Physics;2013-04-01
3. Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors;Japanese Journal of Applied Physics;2012-04-20
4. Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors;Japanese Journal of Applied Physics;2012-04-01
5. Effect of anIn-situProcess on Electrical Properties of n-Type Pentacene-Based Metal–Oxide–Semiconductor Diodes with Yb Donor Layer;Applied Physics Express;2012-02-21
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