AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs
Author:
Affiliation:
1. Tokyo Institute of Technology
Publisher
Institute of Electronics, Information and Communications Engineers (IEICE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
https://www.jstage.jst.go.jp/article/transele/E102.C/2/E102.C_2018OMP0008/_pdf
Reference36 articles.
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4. [4] C. Piliego, D. Jarzab, G. Gili, Z. Chen, A. Facchetti, and M.A. Loi, “High Electron Mobility and Ambient Stability in Solution-Processed Perylene-Based Organic Field-Effect Transistors,” Adv. Mater., vol.21, no.16, pp.1573-1576, 2009. 10.1002/adma.200803207
5. [5] H.N. Tsao, D. Cho, J.W. Andreasen, A. Rouhanipour, D.W. Breiby, W. Pisula, and K. Müllen, “Plastic Electronics: The Influence of Morphology on High-Performance Polymer Field-Effect Transistors,” Adv. Mater., vol.21, no.2, 2009. 10.1002/adma.200990000
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