Novel Eight-Transistor SRAM cell for write power reduction

Author:

Prabhu C.M.R.1,Singh Ajay Kumar1

Affiliation:

1. Faculty of Engineering & Technology, Multimedia University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. [1] N. S. Kim, D. Blaauw, and T. Mudge, “Quantitative analysis and optimization techniques for on-chip cache leakage power,” IEEE Trans. Very Large Scale Integr. (VLSI) Syst., vol. 13, no. 10, pp. 1147-1156, 2005.

2. [2] C. Senthipari, K. Diwakar, C. M. R. Prabhu, and A. K. Singh, “Power deduction in digital signal processing circuit using inventive CPL subtractor circuit,” ICSE 2006, proc. 2006 Kuala Lumpur, Malaysia, pp. 820-824, Dec. 2006.

3. SRAM Circuit With Expanded Operating Margin and Reduced Stand-By Leakage Current Using Thin-BOX FD-SOI Transistors

4. Low-Power Logic Circuit and SRAM Cell Applications With Silicon on Depletion Layer CMOS (SODEL CMOS) Technology

5. [5] A. Chandrakasan, W. J. Bowbill, and F. Fox, “Design of High Performance Microprocessor Circuits,” Wiley-IEEE Press, p. 584, 2000.

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