RF CMOS Integrated Circuit: History, Current Status and Future Prospects-Reference-Cited by-同舟云学术

RF CMOS Integrated Circuit: History, Current Status and Future Prospects

Published:2011 Issue:2 Volume:E94.A Page:556-567
ISSN:0916-8508
Container-title:IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences
language:en
Short-container-title:IEICE Trans. Fundamentals

Author:

ISHIHARA Noboru¹,AMAKAWA Shuhei²,MASU Kazuya¹

Affiliation:

1. Solutions Research Laboratory, Tokyo Institute of Technology

2. Department of Semiconductor Electronics and Integration Science, Graduate school of advanced Sciences of Matter, Hiroshima University

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Applied Mathematics,Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Signal Processing

Link

https://www.jstage.jst.go.jp/article/transfun/E94.A/2/E94.A_2_556/_pdf

Reference53 articles.

1. [1] A.A. Abidi, “RF CMOS comes of age,” IEEE J. Solid-State Circuits, vol.39, no.4, pp.549-561, April 2004.

2. [2] T. Tsukahara, J. Kodate, M. Harada, M. Ugajin, and A. Ymagishi, “RF-CMOS circuits technologies and future trends,” IEICE Trans. Electron. (Japanese Edition), vol.J86-C, no.7, pp.674-686, July 2003.

3. [3] J.Y.-C. Chang, A.A. Abidi, and M. Gaitan, “Large suspended inductors on silicon and their use in a 2-pm CMOS RF amplifier,” IEEE Electron Device Lett., vol.14, no.5, pp.246-248, May 1993.

4. [4] G. Gramegna, A. Magazzu, C. Sclafani, and M. Paparo, “Ultra-wide dynamic range 1.75dB noise figure, 900MHz CMOS LNA,” IEEE 2000 International Solid-State Circuits Conference (ISSCC), pp.380-381, Feb. 2000.

5. [5] S. Park and W. Kim, “Design of a 1.8GHz low-noise amplifier for RF front-end in a 0.8µm CMOS technology,” IEEE Trans. Consum. Electron., vol.47, no.1, pp.10-15, Feb. 2001.

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