Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology-Reference-Cited by-同舟云学术

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Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology

Published:2001 Issue:1 Volume:47 Page:10-15
ISSN:0098-3063
Container-title:IEEE Transactions on Consumer Electronics
language:
Short-container-title:IEEE Trans. Consumer Electron.

Author:

Sungkyung Park ,Wonchan Kim

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Media Technology

Link

http://xplorestaging.ieee.org/ielx5/30/19894/00920413.pdf?arnumber=920413

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