Electrical Properties of Sis Heterostructures n-SnS2/CdTeO3/p-CdZnTe

Abstract

Conditions for the production of rectifying semiconductor-insulator-semiconductor (SIS) heterostructures n-SnS2/CdTeO3/p-Cd1−xZnxTe with the use of the spray-pyrolysis of SnS2 thin films on p-Cd1−xZnxTe crystalline substrates with the formation of an intermediate tunnel-thin CdTeO3 oxide layer have been studied. By analyzing the temperature dependences of the current-voltage characteristics, the dynamics of the heterostructure energy parameters is determined, and the role of energy states at the CdTeO3/p-Cd1−xZnxTe interface in the formation of forward and reverse currents is elucidated. By analyzing the capacity-voltage characteristics, the processes of charge accumulation and inversion in SIS structures is considered. An energy diagram of the examined heterostructure, which well describes experimental electro-physical phenomena, is proposed.