Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method-Reference-Cited by-同舟云学术

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Determination of crystallization conditions of Ge/GaAs heterostructures in scanning LPE method

Published:2020-09-10 Issue:3 Volume:23 Page:294-301
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:SPQEO

Author:

Tsybulenko V.V., ,Shutov S.V.,Yerochin S.Yu., ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference23 articles.

1. 1. R. Kour, S. Arya, S. Verma et al. Review - Recent advances and challenges in indium gallium nitride (InxGa1-xN) materials for solid state lighting. ECS J. Solid State Sci. Technol. 2020. 9. 015011.

2. 2. Izyumskaya N., Avrutin V., Ding K. et al. Emergence of high quality sputtered III-nitride semiconductors and devices. Semicond. Sci. Technol. 2019. 34. 093003.

3. 3. Niu S., Wei Z., Fang X. et al. Brief review of epitaxy and emission properties of GaSb and related semiconductors. Crystals. 2017. 7. P. 337.

4. 4. Ci J.-W., Lian C.-Y., Uen W.-Y. et al. Formation mechanism of high Ge content SiGe epilayer on Si by liquid phase epitaxy using Ge-Sn solution. Thin Solid Films. 2020. 704. P. 137981.

5. 5. Zhang D., Yang Q., Jiang Y. et al. Laser-induced damage of garnet films grown by LPE. Opt. Mater. 2019. 91. P. 268-273.

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