Electronic properties of silicon surface at different-Reference-Cited by-同舟云学术

Electronic properties of silicon surface at different

Published:2001-02-16 Issue:1 Volume:4 Page:12-18
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Kirillova S.I.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference29 articles.

1. 1. V.G. Litovchenko, A.P. Gorban, The Basics of Physics of the Microelectronic Metal-Insulator-Semiconductor Systems (in Russian), Naukova Dumka, Kiev (1978).

2. 2. Properties of the Metal-Insulator-Semiconductor Structures (in Russian), Ed. A.V. Rzhanov, Nauka, Moscow (1976).

3. 3. V.F. Kiselev, Surface Phenomena in Semiconductors and Insulators (in Russian), Nauka, Moscow (1970).

4. 4. The Physics and Chemistry of SiO2 and the Si-SiO2 interface. Proc. 3rd Intern. Symposium, Pennington, NJ (1996).

5. 5. N.M. Johnson // Appl. Phys. Lett. 34(11), p. 803 (1979).

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