On the origin of 300 K near-band-edge luminescence in CdTe
Author:
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference14 articles.
1. 1. N.C.Giles-Taylor, R.N.Bicknell, D.K.Blanks et al. Photoluminescence of CdTe: A comparison of bulk and epitaxial material // J.Vac.Sci.Technol., A3(1), pp. 76-82 (1985).
2. 2. D.J.Olego, J.P.Faurie, S.Sivananthan, P.M.Raccah. Optoelectronic properties of Cd1-xZnxTe films grown from molecular-beam epitaxy on GaAs substrates // Appl. Phys. Lett., 47(11), 1172-1174 (1985).
3. 3. N.C.Giles, J.Lee, D.Rajavel, C.J.Sommers. Photoluminescence of n-type CdTe:I grown by molecular beam epitaxy // J.Appl.Phys., 73(9), pp.4541-4545 (1993).
4. 4. J.Lee, N.C.Giles, D.Rajavel, C.J.Sommers. Room temperature band-edge photoluminescence from cadmium telluride // Phys.Rev. B, 49(3), pp.1668-1676 (1994).
5. 5. D.E.Cooper, J.Bajaj, P.R.Neuman. Photoluminescence spectroscopy of excitons for evaluation of high-quality CdTe crystals // J.Crystal Growth, 86(1-4), pp. 544-551 (1988).
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