Author:
Kladko V.P., ,Melnik V.P.,Liubchenko О.I.,Romanyuk B.M.,Gudymenko О.Yo.,Sabov Т.M.,Dubikovskyi О.V.,Maksimenko Z.V.,Kosulya О.V.,Kulbachynskyi O.A.,Lytvyn P.M.,Efremov О.O., , , , , , , , , , ,
Abstract
VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have been studied. Taking into account the obtained results, theoretical modeling of the structure was performed and the parameters of the metal-insulator transition have been calculated.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Cited by
4 articles.
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