Author:
Strelchuk V.V., ,Nikolenko A.S.,Lytvyn P.M.,Ivakhnenko S.O.,Kovalenko T.V.,Danylenko I.M.,Malyuta S.V., , , , , ,
Abstract
Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained using solution-melt crystallization at high pressure 6.5 GPa and temperatures 1380…1420 °C. Using the Fe-Al solvent, which allows controlled incorporation of boron dopant between 2·10–4…10–2 at.% made it possible to vary the electro-physical properties of the crystals. Methods of micro-photogrammetry, atomic force microscopy, and micro-Raman spectroscopy were applied to reveal sectorial inhomogeneity of impurity composition and morphology of different crystal faces. The obtained crystals were shown to have high structural perfection and boron concentration ranging approximately from 1·1017 up to 7·1018 cm–3. An increase in boron concentration increases the area of {111} faces relatively to the total crystal area. Nanoscale morphological features like growth terraces, step-bunching, dendrite-like nanostructures, columnar substructures, negative growth pyramids on different crystal faces are shown to reflect peculiarities of carbon dissolution at high pressures and temperatures. The changes in the crystals’ habit and surface morphology are discussed in relation to inhomogeneous variation of thermodynamic conditions of crystal growth and dissolution at different boron concentrations.
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka) (Publications)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. 1. Sussmann R.S., ed. CVD Diamond for Electronic Devices and Sensors. John Wiley&Sons. Chichester, UK, 2009.
2. 2. Satoshi K., Hitoshi U., Julien P., Mariko S., eds. Power Electronics Device Applications of Diamond Semiconductors. Elsevier, 2018.
3. 3. Kato H., Oyama K., Makino T. et al. Diamond bipolar junction transistor device with phosphorusdoped diamond base layer. Diam. Relat. Mater. 2012. 27-28. P. 19-22.
4. 4. Iwasaki T., Yaita J., Kato H. et al. 600 V diamond junction field-effect transistors operated at 200 C. IEEE Electron Device Lett. 2014. 35. P. 241-243.
5. 5. Volpe P.-N., Muret P., Pernot J. et al. High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer. phys. status solidi. 2010. 207. P. 2088-2092.
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献