High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer-Reference-Cited by-同舟云学术

High breakdown voltage Schottky diodes synthesized on p-type CVD diamond layer

Published:2010-08-16 Issue:9 Volume:207 Page:2088-2092
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Volpe Pierre-Nicolas,Muret Pierre,Pernot Julien,Omnès Franck,Teraji Tokuyuki,Jomard François,Planson D.,Brosselard Pierre,Dheilly Nicolas,Vergne Bertrand,Scharnholtz Sigo

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. Exceptionally high voltage Schottky diamond diodes and low boron doping

2. Device processing, fabrication and analysis of diamond pseudo-vertical Schottky barrier diodes with low leak current and high blocking voltage

3. High-voltage single-crystal diamond diodes

4. Electric field breakdown of lateral-type Schottky diodes formed on lightly doped homoepitaxial diamond

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