Characterization of Cobalt Phthalocyanine Thin Film on Silicon Substrate Using Spectroscopic Ellipsometry

Abstract

The cobalt phthalocyanine film (CoPc) was prepared by an ultra-high vacuum system onto a silicon substrate. Structural features and optical properties of the organic semiconductor CoPc has been determined with the use of spectroscopic ellipsometry over the wavelength interval 300–1000 nm. By restricting it to 900–1000 nm the film thickness is determined, and, by the point-by-point fit, the behavior of the dielectric function is established in the entire spectral region. Thus, the optical properties are determined from spectral ellipsometric data using mathematical models based on Gaussian oscillators, which have led to an excellent fit to the experimental data with a relatively low mean square error. Cobalt phthalocyanine was treated as a uniaxial material.