Effect of mechanical stress on operation of diode temperature sensors-Reference-Cited by-同舟云学术

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Effect of mechanical stress on operation of diode temperature sensors

Published:2002-12-10 Issue:3 Volume:5 Page:322-327
ISSN:1560-8034
Container-title:Semiconductor Physics, Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Borblik V.L.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. 1. I. De Wolf, Micro-Raman spectroscopy to study local mechanical stress is silicon integrated circuits // Semicond. Sci. Technol. 11(2), pp. 139-154 (1996).

2. 2. A. Szekeres and P. Danesh, Mechanical stress in SiO2/Sistructures formed by thermal oxidation of amorphous and crystalline silicon // Semicond. Sci. Technol. 11(8), pp. 1225-1230 (1996).

3. 3. J.J. Wortman, J.R. Hauser and R.M. Burger, Effect of mechanical stress on p-n junction device characteristics // J.Appl. Phys. 35(7), pp. 2122-2131 (1964).

4. 4. Y. Kanda, Effect of stress on germanium and silicon p-n junction // Japan. J. Appl. Phys. 6(4), pp. 475-486 (1967).

5. 5. J. F. Creemer and P.J. French, The piezojunction effect in bipolar transistors at moderate stress level: a theoretical and experimental study // Sensors and Actuators A 82(1-3), pp.181-185 (2000).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of junction diodes under conditions of bisotropic strains;Semiconductor physics, quantum electronics and optoelectronics;2009-01-30

2. About manifestation of the piezojunction effect in diode temperature sensors;Semiconductor Physics, Quantum Electronics and Optoelectronics;2003-03-18

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