Calculation of electron mobility and effect of dislocation scattering in GaN

Author:

Kundu Janardan, ,Sarkar C.K.,Mallick P.S., ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Electron Mobility Calculations and Scattering Effects in GaN Compound Semiconductor;2024 IEEE 4th International Maghreb Meeting of the Conference on Sciences and Techniques of Automatic Control and Computer Engineering (MI-STA);2024-05-19

2. Low temperature mobility controlled by charged dislocations and neutral defects in Pb 1−x Eu x Se layers grown by MBE;Materials Science in Semiconductor Processing;2016-01

3. Counting Dislocations in Microcrystals by Coherent X-Ray Diffraction;Physical Review Letters;2013-08-07

4. The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys;Nanoscale Research Letters;2012-08-31

5. Bulk Dislocation Core Dissociation Probed by Coherent X Rays in Silicon;Physical Review Letters;2011-02-10

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