Elastic Strains in SiGe Heterostructures with Non-Uniform Quantum Dots
Author:
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
General Physics and Astronomy
Reference20 articles.
1. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications
2. Interlevel transitions and two-photon processes in Ge/Si quantum dot photocurrent
3. Analysis of SiGe/Si quantum dot superlattices grown by low-pressure chemical vapor deposition for thin solar cells
4. Self-assembled silicon-germanium nanostructures for CMOS compatible light emitters
5. Electron spin resonance study of Si/SiGe quantum dots
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. The Influence of Mechanical Strains and Quantum-Size Effects on the Photosensitivity of Ge/Ge(x)Si(1-x) Nanofilm;Romanian Journal of Physics;2024-03-15
2. Electron and hole separation in Ge nanocones formed on Si1−xGex solid solution by Nd:YAG laser radiation;Applied Surface Science;2015-08
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