1. 1. A.R. Basman, A.B. Gerasimov, M.K. Gogotishvili, N.D. Dolidze, N.G. Kakhudze, B.M. Kovalenko, Effect of donor impurities on kinetics of radiation defects of annealing in germanium // Fizika i tekhnika poluprovod. (7), p. 1377-1381 (1973) (in Russian).
2. 2. A.B. Gerasimov, N.D. Dolidze, E.M. Kovalenko, M.G. Mtskhvetadze, Study of absorption band in the range 0.52 eV in germanium irradiated by fast electrons at the temperature 77 K // Ibid.2(7), p. 1349-1352 (1977).
3. 3. A.B. Gerasimov, N.D. Dolidze, B.M. Kovalenko, N.V. Chelidze, Effect oflight on low temperature annealing of defects in germanium // Ibid. 1(7), p. 982-985 (1967).
4. 4. Sh.M. Abbasov, K.R. Allakverdiyev, G.T. Agaverdiyeva, N.A. Bakhishov, A.I. Nagiyev, Study of absorption band in the region 0.52 eV in n-Ge1-xSix solid solution irradiated by fast electrons at the temperature 77 K // Ibid.21(12), p. 2235-2238 (1987).
5. 5. H.J. Stein, Trapping of positrons by radiation induced defects in Ge. In: Rad. Dan. Def. Semicond. Conf. Ser. No 16, London-Bristol, p. 315 (1973).