Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge1-xSix heterostructure-Reference-Cited by-同舟云学术

Influence of electron irradiation on spectra of light electroreflection from the surface of Ge/Ge1-xSix heterostructure

Published:2009-10-30 Issue:4 Volume:12 Page:357-361
ISSN:1560-8034
Container-title:Semiconductor physics, quantum electronics and optoelectronics
language:
Short-container-title:Semicond. phys. quantum electron. optoelectron.

Author:

Abbasov Sh. M.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. 1. J.L. Bean, L.C. Feldman, A.T. Fiory, S. Nakahra, I.K. Robinson // J. Vac. Sci. Techn. A 2, No. 2, p. 436-440 (1984).

2. 2. O.A. Kuznetsov, B.A. Tolomasov, N.V. Gudkova, V.S. Krasilnikov, Investigation of multilayer heteroepitaxial structures Ge1-xSix-Ge // VI Intern. Conference on the Growth of Crystals 1, p. 315-318, Moscow, 1980 (in Russian).

3. 3. Sh.M. Abbasov, Influence of Irradiation on Electrophysical, Optical and Photoelectrical Properties of Solid Solutions Ge-Si. Publishing House "Elm", Baku, 2003.

4. 4. F. Capasso, K. Mohammed, A.Y. Cho, R. Hull, A.L. Hutchinson // Phys. Rev. Lett. 55, No. 10, p. 1152-1155 (1985).

5. 5. Multilayer Semiconductor Structures and Superlattices. Thematical Collection. ISP AS USSR. Gorkiy. (1984) (in Russian).

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