An analytical accumulation mode SOI pMOSFET model for high-temperature analog applications
Author:
Publisher
National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)
Subject
Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference15 articles.
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2. 2. B. Iñiguez, B. Gentinne, V. Dessard, D. Flandre, A physically-based C∞ -continuous model for accumulation-mode SOI pMOSFET's // IEEE Trans. Electron. Devices 46(12), p. 2295-2303 (1999).
3. 3. B. Iñiguez, L. F. Ferreira, B. Gentinne, D. Flandre, A physically-based C∞ -continuous fully-depleted SOI MOSFET model for analog applications // IEEE Trans. Electron. Devices 43(10), p. 568-575 (1996).
4. 4. B. Gentinne, D. Flandre, J.-P. Colinge, F. van de Wiele, Measurement and twodimensional simulation of thin-film SOI MOSFETs: Intrinsic gate capacitances at elevated temperatures, // Solid-State Electron. 39(11), p. 1613-1619 (1996).
5. 5. A. L. P. Rotondaro, U. K. Magnusson, C. Clayes, D. Flandre, A. Terao, and J.-P. Colinge, Evidence of different conduction mechanisms in accumulation mode p-channel SOI MOSFET's at room and liquidhelium temperatures // IEEE Trans. Electron. Devices 40(4), p. 727-732 (1993).
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