Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures-Reference-Cited by-同舟云学术

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Evidence of different conduction mechanisms in accumulation-mode p-channel SOI MOSFET's at room and liquid-helium temperatures

Published:1993-04 Issue:4 Volume:40 Page:727-732
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Rotondaro A.L.P.,Magnusson U.K.,Claeys C.,Flandre D.,Terao A.,Colinge J.-P.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/16/5233/00202784.pdf?arnumber=202784

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A silicon field-effect hall sensor with an extended operating temperature range;Instruments and Experimental Techniques;2016-09

3. A New Methodology for Probing the Electrical Properties of Heavily Phosphorous-Doped Polycrystalline Silicon Nanowires;Japanese Journal of Applied Physics;2013-04-01

4. Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain;Japanese Journal of Applied Physics;2012-06-01

5. Characteristics of n-Type Asymmetric Schottky-Barrier Transistors with Silicided Schottky-Barrier Source and Heavily n-Type Doped Channel and Drain;Japanese Journal of Applied Physics;2012-05-14

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