Morphology and optical constants of Gе nanocrystalline films deposited on Sі(001)

Author:

Kozyrev Y. N., ,Lysenko V. S.,Gomeniuk Y. V.,Kondratenko O. S.,Iliash S. A.,Kondratenko S. V., , , , ,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Reference14 articles.

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4. Self-organization of nanostructures in semiconductor heteroepitaxy. Phys. Rep. 2002. 365(5–6): 335. I. Berbezier I., Ronda A. SiGe nanostructures.;Teichert;Surf Sci Rep,2009

5. Growth of undulating Si0.5Ge0.5 layers for photodetectors at λ = 1.55 μm.;Lafontaine;J Appl Phys,1999

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1. Calculation of band structure of the strained germanium nanofilm, doped with a donor impurity;Physica E: Low-dimensional Systems and Nanostructures;2020-04

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