Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals-Reference-Cited by-同舟云学术

Dose dependence of tensoresistance for the symmetrical orientation of the deformation axis relatively to all isoenergetic ellipsoids in γ-irradiated (60Co) n-Si crystals

Published:2018-03-29 Issue:1 Volume:21 Page:48-53
ISSN:1560-8034
Container-title:Semiconductor Physics Quantum Electronics and Optoelectronics
language:
Short-container-title:Semicond. Phys. Quantum Electron. Optoelectron.

Author:

Gaidar G.P.,

Publisher

National Academy of Sciences of Ukraine (Co. LTD Ukrinformnauka)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference18 articles.

1. 1. Gaidar G.P., Baranskii P.I., Kolomoets V.V. Tenso-resistance of n-Si and n-Ge multi-valley semiconductors over a wide range of concentrations. Fizyka i khimiya tverdoho tila. 2014. 15, No 1. P. 58–62 (in Ukrainian).

2. 2. Baranskii P.I., Fedosov A.V., Gaidar G.P. Physical Properties of Silicon and Germanium Crystals in the Fields of Effective External Influence. Nadstyria, Lutsk, 2000 (in Ukrainian).

3. 3. Budzuliak S.I. Tensoresistive effects in strongly deformed n-Si and n-Ge crystals. Fizyka i khimiya tverdoho tila. 2012. 13, No 1. P. 34–39 (in Ukrainian).

4. 4. Luniov S.V., Nazarchuk P.F., Panasiuk L.I. About parameters of Δ 1 minimums in n-Ge. Abstracts of the 5 th Ukrainian Scientific Conference on Physics of Semiconductors (USCPS-5). Uzhgorod, 2011. P. 249 (in Ukrainian).

5. Tensosensitivity in Δ 1 -model of the conduction band germanium crystals.;Luniov;Sensor Electronics and Microsystem Technologies,2013

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