Tensoelectric properties irradiated by the fast electrons n-Ge single crystals-Reference-Cited by-同舟云学术

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Tensoelectric properties irradiated by the fast electrons n-Ge single crystals

Published:2023-05-11 Issue:9-10 Volume:178 Page:1073-1080
ISSN:1042-0150
Container-title:Radiation Effects and Defects in Solids
language:en
Short-container-title:Radiation Effects and Defects in Solids

Author:

Luniov S. V.¹,Khvyshchun M. V.²,Zakharchuk D. A.¹,Maslyuk V. T.³

Affiliation:

1. Department of Physics and Higher Mathematics, Lutsk National Technical University, Lutsk, Ukraine

2. Department of Electronics and Telecommunications, Lutsk National Technical University, Lutsk, Ukraine

3. Department of Photonuclear Process, Institute of Electron Physics NAS of Ukraine, Uzhghorod, Ukraine

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Link

https://www.tandfonline.com/doi/pdf/10.1080/10420150.2023.2211195

Reference30 articles.

1. Büttgenbach S.; Constantinou I.; Dietzel A.; Leester-Schädel M.; Büttgenbach S.; Constantinou I.; Leester-Schädel M. Piezoresistive Pressure Sensors. In Case Studies in Micromechatronics: From Systems to Processes : 2020; pp. 21–85.

2. Review on pressure sensors: a perspective from mechanical to micro-electro-mechanical systems

3. MEMS Sensors for Automotive Applications: A Review;Bhatt G.;Sens. Autom. Aerosp. Appl.,2019

4. Mikhailenko I.; Orlov A.; Serdega B. Diagnostics of Thermal Stress in MEMS Pressure Transducer Based on Tenso-Emf Effect. In 2017 IEEE 37th International Conference on Electronics and Nanotechnology (ELNANO) IEEE April 2017; pp. 201–204.

5. Microengineering Pressure Sensor Active Layers for Improved Performance;Ruth S.R.A.;Adv. Funct. Mater.,2020

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