INFLUENCE OF UNIAXIAL PLASMON METASURFACE ON ANTIREFLECTION PROPERTIES OF DIELECTRIC LAYER

Abstract

Subject and Purpose. Th e study of the eff ect of refl ectionless electromagnetic waves propagation through solid-state structures containing metasurfaces at its boundaries has a great scientifi c and practical interest for improving the performance and creating new types of nanoelectronics and optics devices. Th e aim of this work is to study the eff ect of an anisotropic uniaxial plasmon metasurface located at the boundary of the dielectric layer on the eff ect of refl ectionless propagation of electromagnetic waves. The study of the effect of refl ectionless propagation of electromagnetic waves through solid-state structures containing metasurfaces at its boundaries is of great scientific and practical interest for improving the performance and creating new types of nanoelectronics and optics devices. Methods and Methodology. Numerical simulations were used to study the effect of the refl ectionless electromagnetic waves propagation through an anisotropic uniaxial plasma metasurface lying on the dielectric layer. It is used to determine the thicknesses and permeability values of the dielectric layer, for which the effect was observed. Results. It is shown that the presence of an anisotropic uniaxial plasmon metasurface on the dielectric layer leads to a signifi cant conditions change of the eff ect of refl ectionless propagation of p-polarized electromagnetic waves along and across the main axis of anisotropy of the metasurface. It was shown that the metasurface removes the rigid restriction of the dielectric layer permeability value. To achieve the effect of refl ectionless propagation of electromagnetic waves, the permeability of the dielectric layer can be chosen within a wide range. Conclusion. Dielectric layers with anisotropic uniaxial plasmonic metasurfaces have signifi cantly better characteristics for the effect of refl ectionless propagation of electromagnetic waves. They can be used to create fundamentally new nanoelectronic and optical devices.