Advanced chemical–mechanical planarization for 4H-SiC substrate by water-soluble inclusion complexes of fullerene
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab8c9b/pdf
Reference21 articles.
1. Reliability and performance limitations in SiC power devices
2. Silicon carbide
3. XPS, UV–vis spectroscopy and AFM studies on removal mechanisms of Si-face SiC wafer chemical mechanical polishing (CMP)
4. Chemi-Mechanical Polishing of On-Axis Semi-Insulating SiC Substrates
5. Chemomechanical Polishing of Silicon Carbide
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3. Temperature-Induced Internal Stress Influence on Specimens in Indentation Tests;Micromachines;2022-06-30
4. Improved chemical mechanical polishing performance in 4H-SiC substrate by combining novel mixed abrasive slurry and photocatalytic effect;Applied Surface Science;2022-02
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