Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?-Reference-Cited by-同舟云学术

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Why do electron traps at E C –0.6 eV have inverse correlation with carbon concentrations in n-type GaN layers?

Published:2020-10-01 Issue:10 Volume:59 Page:105505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Narita Tetsuo^ORCID,Horita Masahiro^ORCID,Tomita Kazuyoshi,Kachi Tetsu^ORCID,Suda Jun

Funder

the Council for Science, Technology and Innovation (CSTI), the Cross-ministerial Strategic Innovation Promotion Program

Ministry of Education, Culture, Sports, Science and Technology

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/abb9ca/pdf

Reference42 articles.

1. Gallium nitride devices for power electronic applications

2. High Voltage Vertical GaN p-n Diodes With Avalanche Capability

3. 1.5-kV and 2.2-m \(\Omega \) -cm \(^{2}\) Vertical GaN Transistors on Bulk-GaN Substrates

4. Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Switching of major nonradiative recombination centers (NRCs) from carbon impurities to intrinsic NRCs in GaN crystals;Applied Physics Letters;2024-06-03

2. Role of carbon in n-type bulk GaN crystals;Journal of Crystal Growth;2024-04

3. Conduction mechanism of Schottky contacts fabricated on etch pits originating from single threading dislocation in a highly Si-doped HVPE GaN substrate;Materials Science in Semiconductor Processing;2023-11

4. 7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management;Applied Physics Letters;2023-10-02

5. Investigation of carbon incorporation in laser-assisted MOCVD of GaN;Applied Physics Letters;2023-04-17

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