Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs-Reference-Cited by-同舟云学术

Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Published:2020-04-01 Issue:4 Volume:59 Page:046505
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kamada Yoichi,Ozaki Shiro,Yaita Junya,Yamada Atsushi,Ohki Toshihiro,Minoura Yuichi,Kumazaki Yusuke,Okamoto Naoya,Makiyama Kozo,Nakamura Norikazu,Kotani Junji

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ab8276/pdf

Reference33 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. N-Polar GaN Cap MISHEMT With Record Power Density Exceeding 6.5 W/mm at 94 GHz

3. An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader

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1. Impact of Nitrogen Concentration and Post‐Deposition Annealing on Electrical Properties of AlON/Etched N‐GaN MOS Capacitors;Advanced Electronic Materials;2023-12-07

2. Development of Diamond Device-Level Heat Spreader for the Advancement of GaN HEMT Power and RF Electronics;IEEE Transactions on Device and Materials Reliability;2023-12

3. Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric;Vacuum;2021-09

4. Growth of microcrystalline diamond films after fabrication of GaN high-electron-mobility transistors for effective heat dissipation;Japanese Journal of Applied Physics;2021-06-14

5. A Poisson–Schrodinger and cellular automaton coupled approach for two-dimensional electron gas transport modeling of GaN-based high mobility electron transistors;Japanese Journal of Applied Physics;2021-01-15