Optical and electrical properties of silicon-implanted α-Al2O3
Author:
Funder
New Energy and Industrial Technology Development Organization
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ac21af/pdf
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1. Band offsets of high K gate oxides on III-V semiconductors
2. Spectroscopic and laser characteristics of Ti:Al_2O_3
3. Low-loss integrated photonics for the blue and ultraviolet regime
4. Nanocrystal size dependence of the third-order nonlinear optical response of Cu:Al2O3 thin films
5. Optically stimulated luminescence and thermoluminescence efficiencies for high-energy heavy charged particle irradiation in Al2O3:C
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4. Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy;Japanese Journal of Applied Physics;2023-06-01
5. Sn and Si doping of α-Al2O3 (10-10) layers grown by plasma-assisted molecular beam epitaxy;Japanese Journal of Applied Physics;2022-11-28
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