Thermal conductivity characteristics in polycrystalline silicon with different average sizes of grain and nanostructures in the grains by UV Raman spectroscopy-Reference-Cited by-同舟云学术

Thermal conductivity characteristics in polycrystalline silicon with different average sizes of grain and nanostructures in the grains by UV Raman spectroscopy

Published:2020-06-10 Issue:7 Volume:59 Page:075501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Takeuchi Haruki,Yokogawa Ryo^ORCID,Takahashi Kazuya,Komori Katsuhiko,Morimoto Tamotsu,Yamashita Yuichiro,Sawamoto Naomi,Ogura Atsushi^ORCID

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ab9624/pdf

Reference36 articles.

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3. A High-Gain Inverter With Low-Temperature Poly-Si Oxide Thin-Film Transistors

4. Junctionless Nanosheet (3 nm) Poly-Si TFT: Electrical Characteristics and Superior Positive Gate Bias Stress Reliability

5. Spontaneous Degradation of Flexible Poly-Si TFTs Subject to Dynamic Bending Stress

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