Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry-Reference-Cited by-同舟云学术

Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry

Published:2021-07-07 Issue:7 Volume:4 Page:7385-7392
ISSN:2574-0962
Container-title:ACS Applied Energy Materials
language:en
Short-container-title:ACS Appl. Energy Mater.

Author:

Spirito Davide¹^ORCID,von den Driesch Nils²^ORCID,Manganelli Costanza Lucia¹,Zoellner Marvin Hartwig¹^ORCID,Corley-Wiciak Agnieszka Anna¹,Ikonic Zoran³,Stoica Toma⁴^ORCID,Grützmacher Detlev²,Buca Dan²,Capellini Giovanni¹⁵^ORCID

Affiliation:

1. IHP—Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. Peter Grünberg Institute 9 (PGI-9) and JARA-Fundamentals of Future Information Technologies (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich, Germany

3. Pollard Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K.

4. National Institute of Materials Physics, 405A Atomistilor Street, 077125 Magurele, Romania

5. Dipartimento di Scienze, Università Roma Tre, Viale G. Marconi 446, 00146 Roma, Italy

Funder

Bundesministerium f??r Bildung und Forschung

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Materials Chemistry,Electrochemistry,Energy Engineering and Power Technology,Chemical Engineering (miscellaneous)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsaem.1c01576

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4. ICT - Energy Concepts for Energy Efficiency and Sustainability

5. High‐Performance GeTe‐Based Thermoelectrics: from Materials to Devices

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