Abstract
Abstract
Source–drain electrodes for organic field-effect transistors (OFETs) were fabricated with Ag nanoink on a Si wafer with a 300 nm thick oxide layer using the repellent patterning method, and a depth-profile analysis of the composition and physical properties of the electrode surface was performed once the electrode was oxidized by UV–ozone irradiation. Additionally, OFETs with a wet-processed electrode and 9,10-diphenylanthracene layer were fabricated, and their electrical characteristics were measured. The chemical composition of the Ag electrode surface changed to silver oxide (Ag2O or AgO) due to the longer oxidation treatment time, and the work function value increased. In the OFET with the electrode oxidized for 600 s, increased drain current ∣I
D∣ was observed around a gate voltage of 0 V. Furthermore, good OFET characteristics were obtained [maximum ∣I
D∣ = 326.2 μA, mobility μ = 0.91 cm2V −1·s−1], which were similar to those of the OFETs manufactured using a dry process.
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献