Low turn-on voltage and high breakdown GaN Schottky barrier diodes for RF energy harvesting applications
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab6e09/pdf
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1. Wi-Fi enabled sensors for internet of things: A practical approach
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1. Giant Stark effect assisted radio frequency energy harvesting using atomically thin earth-abundant iron sulphide (FeS2);Journal of Materials Chemistry A;2024
2. Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height;Solid-State Electronics;2023-09
3. 2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction;Micro and Nanostructures;2023-06
4. Evidence of thermionic emission in forward biased β-Ga2O3 Schottky diodes at Boltzmann doping limit;Journal of Applied Physics;2022-01-14
5. Role of Interface Induced Gap States in Polar AlxGa1−xN (0 ≤ x ≤ 1) Schottky Diodes;Journal of Electronic Materials;2021-04-15
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