2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials
Reference22 articles.
1. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018
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