2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction-Reference-Cited by-同舟云学术

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2.2 kV breakdown voltage GaN double-channel Schottky barrier diode with one grading-AlGaN barrier and polarization junction

Published:2023-06 Issue: Volume:178 Page:207562
ISSN:2773-0123
Container-title:Micro and Nanostructures
language:en
Short-container-title:Micro and Nanostructures

Author:

Qiao Sun,Fengbo Liao,Yafang Xie,Jialin Li,Mengxiao Lian,Xichen Zhang,Keming Zhang,Bingzhi Zou,Yian Yin

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Biomaterials

Reference22 articles.

1. The 2018 GaN power electronics roadmap;Amano;J. Phys. D Appl. Phys.,2018

2. Commercial GaN-based power electronic systems: a review;PushpakaranA;J. Electron. Mater.,2020

3. Review of the recent progress on GaN-based vertical power Schottky barrier diodes (SBDs);Sun;Electronics,2019

4. Gallium nitride vertical power devices on foreign substrates: a review and outlook;Dadgar;J. Phys. D Appl. Phys.,2018

5. Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices;Roccaforte;Microelectron. Eng.,2018

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design Optimization of an Enhanced-Mode GaN HEMT with Hybrid Back Barrier and Breakdown Voltage Prediction Based on Neural Networks;Electronics;2024-07-25

2. 2.5 kV/1.95 GW/cm² AlGaN/GaN-Based Lateral Schottky Barrier Diodes With a High-k Field Plate to Reduce Reverse Current;IEEE Transactions on Electron Devices;2024-06

3. 1.43 kV GaN-based MIS Schottky barrier diodes;Journal of Physics D: Applied Physics;2024-02-09

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