Electrical properties of antiferroelectric Pb(Zr,Hf)O3 films fabricated by chemical solution deposition

Abstract

Abstract Pb(Zr1−x Hf x )O3 (x = 0, 0.1, 0.2, 0.5, 1) films were fabricated on Pt/Ti/SiO2/Si substrates using a chemical solution deposition process in this study. The effect of the Zr/Hf ratio on energy-storage performance was evaluated based on the measurement of P–E hysteresis loops. It is shown that the maximum polarization and the recoverable energy density decrease with the increase of the Hf concentration. The energy efficiency of the Hf-contained films is close to each other but higher than the PbZrO3 film. As a result, the Pb(Zr0.9Hf0.1)O3 film achieved in this work exhibited the highest recoverable energy density of 11.3 J cm−3 and a larger energy efficiency of 55% at 800 kV cm−1, exceeding those of either PbZrO3 or PbHfO3 single-component film. This enhancement was related with the size and homogeneity of the crystal grains.