Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering-Reference-Cited by-同舟云学术

Enhancement of energy storage in epitaxial PbZrO3 antiferroelectric films using strain engineering

Published:2014-09-15 Issue:11 Volume:105 Page:112908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ge Jun¹²,Remiens Denis²,Dong Xianlin¹,Chen Ying¹,Costecalde Jean²,Gao Feng¹,Cao Fei¹,Wang Genshui¹

Affiliation:

1. Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai 200050, China

2. IEMN-DOAE-MIMM, CNRS UMR 8520, Université de Valenciennes et du Hainaut Cambrésis, 59313 Valenciennes Cedex 9, Cité scientifique, France and 59655 Villeneuve-d'Ascq Cedex, France

Funder

international partnership project of Chinese Academy of Scienc

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

1. A comprehensive review on the progress of lead zirconate-based antiferroelectric materials

2. Nonlinear dielectric thin films for high-power electric storage with energy density comparable with electrochemical supercapacitors

3. Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films

4. Large strain and high energy storage density in orthorhombic perovskite (Pb0.97La0.02)(Zr1−x−ySnxTiy)O3 antiferroelectric thin films

5. Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films

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