Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer-Reference-Cited by-同舟云学术

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Improved on-state resistance with reliable reverse characteristics in 1.2 kV 4H-SiC MOSFET by selective nitrogen implantation assisted current spreading layer

Published:2020-03-18 Issue:4 Volume:59 Page:046501
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jang Seung Yup,Kim Jaemoo,Lee Hojung,Kim Kyu Sang^ORCID

Funder

National Research Foundation of Korea

Sangji University

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ab7bb0/pdf

Reference31 articles.

1. Fundamentals of Power Semiconductor Devices

2. Power semiconductor device figure of merit for high-frequency applications

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Critical Review on Reliability and Short Circuit Robustness of Silicon Carbide Power MOSFETs;Silicon;2022-08-03

2. A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region;Energies;2021-12-20

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