Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor-Reference-Cited by-同舟云学术

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Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor

Published:2020-08-20 Issue:9 Volume:59 Page:094002
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Suenaga Yu,Higashinakaya Miho,Nagase Takashi,Kobayashi Takashi,Naito Hiroyoshi

Funder

Japan Society for the Promotion of Science

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

https://iopscience.iop.org/article/10.35848/1347-4065/ababb9/pdf

Reference34 articles.

1. Organic Transistors in Optical Displays and Microelectronic Applications

2. 25th Anniversary Article: Organic Field-Effect Transistors: The Path Beyond Amorphous Silicon

3. Analysis of the contact resistance in staggered, top-gate organic field-effect transistors

4. Numerical simulations of contact resistance in organic thin-film transistors

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1. Interpretation of the modulus spectra of organic field-effect transistors with electrode overlap and peripheral regions: determination of the electronic properties of the gate insulator and organic semiconductor;Japanese Journal of Applied Physics;2020-08-20

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