Hall-effect mobility enhancement of sputtered MoS2 film by sulfurization even through Al2O3 passivation film simultaneously preventing oxidation

Abstract

Abstract An aluminum oxide (Al2O3) passivation film that prevents the oxidation of a sputtered and sulfurized molybdenum disulfide (MoS2) film was investigated for an enhancement of the Hall-effect mobility. A remarkably high Hall-effect electron mobility value of 100 cm2 V−1 s−1 was achieved using 3 nm passivation film, as compared to 25 cm2 V−1 s−1 for an as-deposited MoS2 film, because sulfurization is able to be yielded even through the Al2O3 film into the MoS2 film.