Band engineering in transition metal dichalcogenides: Stacked versus lateral heterostructures
Author:
Affiliation:
1. Engineering Department, Cambridge University, Cambridge CB2 1PZ, United Kingdom
Funder
European Commission (EC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4953169
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1. Nobel Lecture: Quasielectric fields and band offsets: teaching electrons new tricks
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5. A subthermionic tunnel field-effect transistor with an atomically thin channel
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