Importance of crystallinity improvement in MoS2 film by compound sputtering even followed by post sulfurization

Author:

Imai Shinya,Hamada Takuya,Hamada MasayaORCID,Shirokura TakanoriORCID,Muneta Iriya,Kakushima Kuniyuki,Tatsumi Tetsuya,Tomiya Shigetaka,Tsutsui Kazuo,Wakabayashi Hitoshi

Abstract

Abstract The MoS2 film for chip-size area was synthesized by two step processes consisting of MoS2-compound sputtering and post sulfurization. We intentionally revealed that the crystallinity of sulfurized MoS2 film depends on that of just-after-sputtered film. Therefore, a crystallinity improvement just-after sputtering is mandatory to achieve an excellent quality MoS2 film after sulfur-vapor annealing for thin film transistor, sensor and human interface device applications.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Impact of crystallinity on thermal conductivity of RF magnetron sputtered MoS2 thin films;Japanese Journal of Applied Physics;2024-05-01

2. One-step sputtering of MoSSe metastable phase as thin film and predicted thermodynamic stability by computational methods;Scientific Reports;2024-03-26

3. Reduction of contact resistance to PVD-MoS₂ film using aluminum–scandium alloy (AISc) edge contact;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

4. Improvement of MoS2 Film Quality by Solid-Phase Crystallization from PVD Amorphous MoSx Film;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

5. Grain-Size Enlargement of MoS2 Film by Low-Rate Sputtering with Molybdenum Grid;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

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