Multilayered highly-active dopant distribution by UV nanosecond melt laser annealing in Ga and B co-implanted high Ge content SiGe:B epilayers
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab8757/pdf
Reference26 articles.
1. Diffusion of ion-implanted boron in germanium
2. Ultra Low Contact Resistivities for CMOS Beyond 10-nm Node
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1. Non-Equilibrium Growth of Surface Wrinkles Emerging in an SiO2/Si Stack during Si Melting Induced by UV Nanosecond Pulsed Laser Annealing;ECS Journal of Solid State Science and Technology;2022-10-01
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3. Ultralow Contact Resistivity on Ga-Doped Ge with Contact Co-Implantation of Ge and B;ECS Journal of Solid State Science and Technology;2022-05-01
4. Quantitative analysis of effect of dopant interaction on microstructural, physical, and electrical properties in laser-annealed SiGe:B:Ga film;Thin Solid Films;2022-04
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