Enhancement of channel mobility in 4H-SiC trench MOSFET by inducing stress at SiO2/SiC gate interface

Author:

Kagoshima E.,Takeuchi W.,Kutsuki K.,Sakashita M.,Fujiwara H.,Nakatsuka O.ORCID

Abstract

To investigate the impact of stress at the SiO2/SiC gate interface on the channel mobility of 4H-SiC trench MOSFETs, we fabricated trench MOSFETs with two variations of stress in the channel region by changing the deposition temperature of polycrystalline silicon used for gate electrodes. The results found that effective mobility was enhanced by several dozen MPa of tensile stress toward [ 1 1 ¯ 00 ] induced by the polycrystalline silicon. Based on the temperature dependence of mobility, all scattering mobilities were enhanced. It was supposed that the electron effective mass decreased because of tensile stress induced at the channel region.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3