Abstract
Abstract
Thermal desorption spectroscopy using stable isotopes of 18O2 and D2 was employed to investigate the incorporation and behavior of oxygen-based species in a-IGZO films during plasma assisted processing. Specifically, the behavior of oxygen introduced during deposition with an Ar-18O2 plasma was assessed. The data show that the oxygen amount incorporated in these films during deposition was greatly reduced by a post-deposition plasma treatment. The OD radicals introduced into a-IGZO films deposited with Ar-16O2 during a post-treatment with an Ar + D2 + O2 mixture was also examined. The results indicate that −OD groups in the films were strongly bonded to the metal atoms.
Subject
General Physics and Astronomy,General Engineering