Gas adsorption effects on electrical properties of amorphous In2O3 thin-film transistors under various environments
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ab7413/pdf
Reference43 articles.
1. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
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