Reaction pathway analysis for the contraction of 4H-SiC partial-dislocations pair in the vicinity of surface
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
https://iopscience.iop.org/article/10.35848/1347-4065/ac1126/pdf
Reference42 articles.
1. Degradation of hexagonal silicon-carbide-based bipolar devices
2. Physical phenomena affecting performance and reliability of 4H–SiC bipolar junction transistors
3. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers
4. Step-controlled epitaxial growth of SiC: High quality homoepitaxy
5. Technological Breakthroughs in Growth Control of Silicon Carbide for High Power Electronic Devices
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of terraces and steps on the 4H-SiC BPD-TED conversion rate: A reaction pathway analysis;Journal of Applied Physics;2024-03-01
2. Molecular dynamics study of nanostructured polycrystalline CoCrCuFeNi high entropy alloy concerning temperature dependence of deformation-induced phase transformation;Mechanical Engineering Journal;2024
3. Charge-transfer interatomic potential to reproduce 30° partial dislocation movements for 4H-SiC in the surface vicinity and its application to BPD-TED conversion;Computational Materials Science;2024-01
4. Investigation on Step-Bunched Homoepitaxial Layers Grown on On-Axis 4H-SiC Substrates via Molten KOH Etching;Crystals;2022-05-30
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3