Simulation of channeled implantation of magnesium ions in gallium nitride
Author:
Funder
Ministry of Education, Culture, Sports, Science and Technology
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
https://iopscience.iop.org/article/10.35848/1882-0786/ac2a55/pdf
Reference39 articles.
1. Planar Nearly Ideal Edge-Termination Technique for GaN Devices
2. 1.8 mΩ·cm2vertical GaN-based trench metal–oxide–semiconductor field-effect transistors on a free-standing GaN substrate for 1.2-kV-class operation
3. Over 1.0 kV GaN p -n junction diodes on free-standing GaN substrates
4. High-Breakdown-Voltage and Low-Specific-on-Resistance GaN p–n Junction Diodes on Free-Standing GaN Substrates Fabricated Through Low-Damage Field-Plate Process
5. Vertical GaN p-n Junction Diodes With High Breakdown Voltages Over 4 kV
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2. Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation;IEEE Transactions on Electron Devices;2024-09
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