Research on photo-generated carriers escape in PIN and NIN structures with quantum wells-Reference-Cited by-同舟云学术

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Research on photo-generated carriers escape in PIN and NIN structures with quantum wells

Published:2020-07-01 Issue:7 Volume:13 Page:071009
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Tang Xiansheng,Li Xinxin,Yue Chen,Wang Lu,Deng Zhen,Jia Haiqiang,Wang Wenxin,Ji Anchun,Jiang Yang,Chen Hong

Funder

National Nature Science Foundation of China

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

https://iopscience.iop.org/article/10.35848/1882-0786/ab9fc6/pdf

Reference27 articles.

1. Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells

2. Blue-emitting InGaN–GaN double-heterostructure light-emitting diodes reaching maximum quantum efficiency above 200A∕cm2

3. Performance enhancement of AlGaN/InGaN MQW LED with GaN/InGaN superlattice structure

4. Recent Advances of VCSEL Photonics

5. 32 Gbit/s multimode fibre transmission using high-speed, low current density 850 nm VCSEL

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Quantum confinement of carriers in the type-I quantum wells structure;Chinese Physics B;2024-09-01

2. Reanalysis of energy band structure in the type-II quantum wells;Chinese Physics B;2024-05-01

3. Study on the Quantum Confinement of Photo-Generated Carriers in Quantum Wells;IEEE Photonics Journal;2023-06

4. Analysis of Photo-Generated Carrier Escape in Multiple Quantum Wells;Crystals;2023-05-17

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